jbemi-concluctoi zpioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon controlled rectifiers reverse blocking triode thyristors ... designed for industrial and consumer applications such as power supplies; battery chargers; temperature, motor, light, and welder controls. ? economical for a wide range of uses ? high surge current ? ijsm = 550 amps ? rugged construction in either pressfit, stud, or isolated stud ? glass passivated junctions for maximum reliability maximum ratings (tj -- 25c unless otherwise noted.) mcr63-( )a series mcr64 series mcr65 series sens 55 amperes rms 50 thru 800 volts feting peak repetitive forward and reverse blocking voltage, note 1 (tj = 25 to 125c, gate open) 2 mcr63-i )a 3 mcr64- 4 mcr65- 6 8 10 non-repetitive peak reverse blocking voltage (t s 5 ms). note 1 2 mcr63-i (a 3 mcr64- 4 mcr65- 6 8 10 forward current rms peak surge current (one cycle, 60 hz, tj = -40 to + 125c) circuit fusing considerations (t ? 8.3 ms) peak gate power average gate power {pulse width s 2 jis) peak forward gate current peak gala voltage ? forward reverse operating junction temperature range storage temperature range stud torque symbol vdrm or vrrm vrsm 'tirms) itsm ft pgfm pqf(av) !gfm vgfm vgrm tj tstg value 50 100 200 400 600 800 75 150 300 500 700 900 55 550 1255 20 0.5 2 10 10 -40 to +125 -40 to +150 30 unit volts volts amps amps a2s watts watt amps volts ?c c in, ib. case 283-04 style! mcr64 series case 174-04 style 1 mcr63-i )a series case 311-02 style 1 mcr65 s.riei note 1. vdrm and vrrm tor all types can be applied on a continuous basis. ratings apply for zero or negative gats voltage; however, positive gate voltage shell not be applied concurrent with negative potential on the anode blocking voltage* shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. \,l semi-conductors encourages customers to verify that datasheets are current before placing orders. s?am 1-cnnat i*-tnr?
mcr63-i )a seriw ? mcr64 swim ? mcr66 series thermal characteristics characteristic thermal resistance, junction to case pressfit and stud isolated stud symbol rfljc max 1 1.1 unit ow electrical characteristics (tc = 25c unless otherwise noted.i chanctarltik! peak forward or reverse blocking current (vak - rated vdrm or vrrm, gate openl tj = 26c tj - 125c forward "on" voltage htm = 176 a peak) gate trigger current (continuous del (vd - 12 v, rl = bo n) tc = 25*0 tc - -40c gate trigger voltage (continuous dc) (vd = 12 v, rl = 50 ft) tc = 25-c tc = -40-c (vd = rated vdrm, rl - 1 mx tj - 125-q holding current (vd = 12 v, rl - 50 n, gate open) forward voltage application rate (tj - 125c, vd = rated vdrm) symbol 'drm. irrm vtm "gt vgt ih dv/dl mln - ? _ 0.2 ? so mex 10 2 2 40 75 3 3.5 60 ? unit ha ma volts ma volts ma v/|is figure 1 - average current derating figure 2 - power dissipation tc maximum case temperature ici s ? 5 s g 5 > > b> 0 \ ,' ?^ ij: s "^ \0 5^. ?w s \ co v, *v j0? ?>^ s "^ s. \w ^ ( **^ ^ *n t,mcbis? n iddittorul 1 dc (ft 10 20 30 40 so '|(av> average on state current 1amps) 10 ml 3d ? io 'tiavi- avmage on state cuimeilt (amfsi
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